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FGPF70N30 300V, 70A PDP IGBT
October 2006
FGPF70N30
300V, 70A PDP IGBT
Features
* High Current Capability * Low saturation voltage: VCE(sat) =1.4V @ IC = 40A * High Input Impedance * Fast switching * RoHS Complaint
General Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF70N30 offers the optimum solution for PDP applications where low-condution loss is essential.
Application
. PDP System
TO-220F
1 1.Gate
2.Collector
3.Emitter
Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100oC
Description
Collector-Emitter Voltage
FGPF70N30
300 30 160 52 20.8 -55 to +150 -55 to +150 300
Units
V V A W W
o
C
oC o
C
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
---
Max.
2.4 62.5
Units
o o
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF70N30 Rev. A
FGPF70N30 300V, 70A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF70N30
Device
FGPF70N30TU
Package
TO-220F
= 25oC unless otherwise noted
Packaging Type
Rail / Tube
Max Qty Qty per Tube
50ea
per Box
-
Electrical Characteristics T
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES
C
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
300 ----
-0.6 ---
--100 250
V V/oC uA nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC =20A, VGE = 15V Collector to Emitter Saturation Voltage IC =40A, VGE = 15V IC = 70A, VGE = 15V TC = 25oC IC = 70A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---1300 180 60 ---pF pF pF 2.5 ----4.0 1.2 1.4 1.8 1.9 5 1.5 ---V V V V V
VCE(sat)
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 200 V, IC = 40A VGE = 15V VCC = 200 V, IC = 40A RG = 15, VGE = 15V Resistive Load, TC = 125oC VCC = 200 V, IC = 40A RG = 15, VGE = 15V Resistive Load, TC = 25oC -----------17 83 103 160 18 83 104 250 71 10 34 ---300 -------ns ns ns ns ns ns ns ns nC nC nC
2 FGPF70N30 Rev. A
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FGPF70N30 300V, 70A PDP IGBT
Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics
Figure 1. Typical Output Characteristics
160
20V 15V 12V 10V T C = 25 C
o
Figure 2. Typical Output Characteristics
160
20V 15V 12V 10V T C = 125 C
o
Collector Current, IC [A]
120
Collector Current, IC [A]
120
80
V GE = 8V
80
V GE = 8V
40
40
0 0 2 4 6 8 Collector-Emitter Voltage, V CE [V] 10
0 0 2 4 6 8 Collector-Emitter Voltage, V CE [V] 10
Figure 3.Typical Saturation Voltage Characteristics
160
C om m on Em itter V G E = 15V
Figure 4. Transfer Characteristics
160
Com m on Em itter V C E = 20V
o o
120
Collector Current, I [A]
C
Collector Current, IC [A]
TC =
25 C
TC =
25 C
o
o
T C = 125 C
120
T C = 125 C
80
80
40
40
0 0 1 2 C ollector-Em itter Voltage, V
CE
3 [V]
4
0 0 4 8 12 G ate-Em itter Voltage, V G E [ V] 16
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.1
Collector-Emitter Voltage, VCE [V]
Figure 6. Saturation Voltage vs.VGE
70A
Collector-Emitter Voltage, VCE [V]
C om m on Em itter V G E = 15V
20
C o m m o n E m itte r TC = 25 C
o
1.8
16
12
1.5
40A
8
40A
1.2
I C = 20A
4
IC = 2 0 A
70A
0.9 0 25 50 75 100 125 o C ase Tem perature, T C [ C ] 150
00
4
8
12
16
20
G a te -E m itte r V o lta g e , V G E [V ]
3 FGPF70N30 Rev. A
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FGPF70N30 300V, 70A PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V] C om m on Em itter T C = 125 C
o
(Continued)
Figure 8. Capacitance Characteristics
5000
C ies
16
Capacitance [pF]
1000
C oes C res
12
8
100
4
40A I C = 20A
70A
Common Emitter V GE = 0V, f = 1MHz
00
10
T C = 25 C
o
4 8 12 16 G ate-E m itter V o ltage, V G E [V ]
20
0
5 10 15 20 25 Collector-Emitter Voltage, V CE [V]
30
Figure 9. Gate Charge Characteristics
15
Gate-Emitter Voltage, VGE [V]
C o m m o n E m itte r R L = 5 T C = 2 5 OC
Figure 10. SOA Characteristics
200 100
50us 100us 1m s
12
Collector Current, Ic [A]
VCC=100V
10
D C O peration
9
VCC = 200V
1
S ingle N onrepetitive o P ulse T c=25 C C urves m ust be derated linearly with increase in tem perature
6
3
0.1
0 0 20 40 60 G a te C h a rg e , Q g [n C ] 80
0.01 0.1
1 10 100 Collector-Em itter Voltage, V CE [V]
1000
Figure 11. Turn-On Characteristics vs. Gate Resistance
1000
C o m m o n E m itte r V C C = 20 0 V , V G E = 1 5 V IC = 4 0 A T C = 2 5 OC T C = 1 2 5 OC
Figure 12. Turn Off Characteristics vs. Gate Resistance
2000 1000
Switching Time [ns]
Switching Time [ns]
tf tf
100
tr
100
t d(off) Com m on Em itter V CC = 200V, V G E = 15V I C = 40A T C = 25 O C T C = 125 O C
td (o n )
10 0 20 40 60 80 G a te R e s is ta n c e , R G [ ] 100
10 0 20 40 60 80 100
G ate R esistance, R G [ ]
4 FGPF70N30 Rev. A
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FGPF70N30 300V, 70A PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs. Collector Current
1000
Com m on Em itter V G E = 15V, R G = 15 V C C =200V
(Continued)
Figure 14. Turn-Off Characteristics vs. Collector Current
500 400
Com m on Em itter V G E = 15V, R G = 15 V C C =200V T C = 25 O C T C = 125 O C
Switching Time [ns]
Switching Time [ns]
T C = 25 O C T C = 125 O C
300
100
tf
200
tr td(on)
tf t d(off)
10 0 10 20 30 40 50 60 70
C ollector C urrent, I C [A]
100 0 10 20 30 40 50 60 70
C ollecto r C urrent, I C [A]
Figure 15. Switching Loss vs Gate Resistance
1000
Figure 16. Switching Loss VS Collector Current
2000 1000
E off
Switching Loss [uJ]
E on
100
Switching Loss [uJ]
100
E o ff
Com m on E m itter V G E = 15V , R G = 15 V C C =200V E on T C = 25 O C T C = 125 O C
Com m on Em itter V CC = 200V, V GE = 15V I C = 40A T C = 25 O C T C = 125 O C
10
10
0
20
40 60 80 G ate R esistance, R G [ ]
100
0
10
20
30
40
50
60
70
C o llector C urrent, I C [A]
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0 .1
0 .0 1
1 E -3 1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c t a n g u la r P u ls e D u r a t i o n [ s e c ]
5 FGPF70N30 Rev. A
www.fairchildsemi.com
FGPF70N30 300V, 70A PDP IGBT
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20]
4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
6 FGPF70N30 Rev. A
15.87 0.20
www.fairchildsemi.com
FGPF70N30 300V, 70A PDP IGBT
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
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As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
7 FGPF70N30 Rev. A
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